2SC4408 PDF Datasheet
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Description
This is Silicon NPN Epitaxial Type TRANSISTOR. TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC4408
Power Amplifier Applications Power Switching Applications
2SC4408
Unit: mm
Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) High collector power dissipation: PC = 900 mW High-speed switching: tstg = 500 ns (typ.) Complementary to 2SA1680
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range
VCBO VCEO VEBO
IC IB PC Tj Tstg
80 50 6 2 0.2 900 150 55 to 150
V V V A A mW °C °C
JEDEC JEITA TOSHIBA
TO-92MOD ―
2-5J1A
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 0.36 g (typ.)
temperature, current, voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operati.