2SC3808 PDF Datasheet
Please enter the part number you wish to PDF download in the search bar.
Description
This is NPN Epitaxial Planar Silicon Transistor. Ordering number:EN2105A
NPN Epitaxial Planar Silicon Transistor
2SC3808
High hFE, Low-Frequency General-Purpose Amplifier Applications
Applications
· Low frequency general-purpose amplifiers, drivers.
Features
· Large current capacity (IC=2A). · Adoption of MBIT process. · High DC current gain (hFE=800 to 3200). · Low collector-to-emitter saturation voltage
(VCE(sat)≤0.5V). · High VEBO (VEBO≥15V).
Package Dimensions
unit:mm 2043A
[2SC3808]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation
Symbol
VCBO VCEO VEBO
IC ICP PC
Junction Temperature Storage Temperature
Tj Tstg
Tc=25˚C
Conditions
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Collector Cutoff Current Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product Output Capacitance
ICBO IEBO hFE1 hFE2
fT Cob
VCB=50V, IE=0 VEB=10V, IC=0 V.