2SC3807 PDF Datasheet
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Description
This is NPN Epitaxial Planar Silicon Transistor.
Ordering number:EN2018A
NPN Epitaxial Planar Silicon Transistor
2SC3807
High hFE, Low-Frequency General-Purpose Amplifier Applications
Applications
· Low frequency general-purpose amplifiers, drivers.
Package Dimensions
unit:mm 2043A
[2SC3807]
Features
· Large current capacity (IC=2A). · Adoption of MBIT process. · High DC current gain (hFE=800 to 3200). · Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V). · High VEBO (VEBO≥15V).
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC
Tc=25˚C
B : Base C : Collector E : Emitter SANYO : TO-126LP
Conditions
Ratings 30 25 15 2 4 1.2 15 150 55 to +150
Unit V V V A A W W
˚C ˚C
Tj Tstg
Electrical Characteristics at Ta = 25˚C
Parameter Collector Cutoff Current Emitter Cutoff Curre.