2SC3709 PDF Datasheet
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Description
This is NPN EPITAXIAL TYPE (HIGH CURRENT SWITCHING APPLICATIONS). TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC3709A
2SC3709A
High-Current Switching Applications
Unit: mm
Low collector saturation voltage: VCE (sat) = 0.4 V (max) High-speed switching: tstg = 1.0 s (typ.) Complementary to 2SA1451A
Maximum Ratings (Tc = 25°C)
Characteristics
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range
Symbol
VCBO VCEO VEBO
IC IB
PC
Tj Tstg
Rating 60 50 6 12 2
30
150 55 to 150
Electrical Characteristics (Tc = 25°C)
Unit V V V A A
W
°C °C
JEDEC
―
JEITA
―
TOSHIBA
2-10R1A
Weight: 1.7 g (typ.)
Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance
Symbol
Test Condition
ICBO
VCB = 60 V, IE = 0
IEBO
VEB = 6 .