2SC3708 PDF Datasheet
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Description
This is PNP/NPN Epitaxial Planar Silicon Transistor. Ordering number:ENN2217A
PNP, NPN Epitaxial Planar Silicon Transistor
2SA1450, 2SC3708
Low-Frequency Driver Applications
Features
· Adoption of FBET process. · AF amp, AF power amp. · High breakdown voltage : VCEO>80V
Package Dimensions
unit:mm 2003B
[2SA1450, 2SC3708]
5.0 4.0 4.0
0.45 0.5 0.45 0.44
0.6 2.0 14.0 5.0
( ) : 2SA1450
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP IB PC Tj
Tstg
Conditions
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Collector Cutoff Current
ICBO VCB=( )60V, IE=0
Emitter Cutoff Current
IEBO VEB=( )4V, IC=0
DC Current Gain
hFE1 hFE2
VCE=( )5V, IC=( )50mA VCE=( )5V, IC=( )400mA
* : 2SA1450, 2SC3708 are classified by 50mA hFE as follows :
Rank
R
S
T
hFE 100 to 200 140 to 28.