2SC3642 PDF Datasheet
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Description
This is NPN Triple Diffused Planar Silicon Transistor. Ordering number:EN1626C
NPN Triple Diffused Planar Silicon Transistor
2SC3642
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications
Features
· High reliability (Adoption of HVP process). · Fast speed. · High breakdown voltage. · Adoption of MBIT process.
Package Dimensions
unit:mm 2022A
[2SC3642]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP PC Tj
Tstg
Tc=25˚C
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Collector Cutoff Current
Collector-to-Emitter Sastain Voltage Emitter Cutoff Current Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage DC Current Gain Storage Time Fall Time
Symbol
Conditions
ICBO ICES VCEO(sus) IEBO VCE(sat) VBE(sat) hFE tstg
tf
VCB=800V, IE=0 VCE=1200V, RBE=0 IC=1.