2SC3553 PDF Datasheet


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Description

This is Silicon NPN Epitaxial. 2SC3553 Silicon NPN Epitaxial Application Low frequency amplifier Outline SPAK 1 23 1. Emitter 2. Collector 3. Base 2SC3553 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 35 35 4 500 300 150 55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO hFE1* hFE2 Collector to emitter saturation voltage Base to emitter voltage VCE(sat) VBE 1 Min 35 35 4 60 10 Typ 0.2 0.64 Max 0.5 320 0.6 Unit V V V A Test conditions I C = 10 A, IE = 0 I C = 1 mA, RBE = ∞ I E = 10 A, IC = 0 VCB = 20 V, IE = 0 VCE = 3 V, IC = 10 mA VCE = 3 V, IC = 5.