2SC3336 PDF Datasheet


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Description

This is Silicon NPN Triple Diffused. 2SC3336 Silicon NPN Triple Diffused Application High voltage, high speed and high power switching Outline TO-3P 1. Base 2. Collector (Flange) 3. Emitter 1 2 3 2SC3336 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Base current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C Symbol VCBO VCEO VEBO IC I C(peak) IB PC * Tj Tstg 1 Ratings 500 400 10 15 25 7.5 100 150 55 to +150 Unit V V V A A A W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to emitter sustain voltage Symbol VCEO(sus) VCEX(sus) Min 400 400 Typ Max Unit V V Test conditions I C = 0.2 A, RBE = ∞, L = 100 mH I C = 15 A, IB1 = 3.0 A, IB2 = 1 A VBE = 5.0 V, L = 180 H, Clamped I E = 10 mA, IC = 0 VCB = 400 V, IE = 0 VCE = 350 V, RBE = ∞ VCE = 5.0 V, IC = 7.5 A*1 VCE = 5.0 V, IC = 15 A*1 V V s s s I C = 15 A, IB1 = IB2 = 3.0 A VCC .