2SC3134 PDF Datasheet
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Description
This is For AF Applications. Ordering number:EN1048B
PNP, NPN Epitaxial Planar Silicon Transistors
2SA1252, 2SC3134
F for AF Applications
Features
· High VEBO. · Wide ASO and high durability against breakdown.
Package Dimensions
unit:mm 2018A
[2SA1252, 2SC3134]
C : Collector B : Base E : Emitter
( ) : 2SA1252
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions
SANYO : CP
Ratings ( )60 ( )50 ( )15 ( )150 ( )300 200 125 55 to +125
Unit V V V mA mA mW
˚C ˚C
Electrical Characteristics at Ta = 25˚C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Symbo.