2SC2362 PDF Datenblatt


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Beschreibung

This is High-Voltage Low-Noise Amp Applications. Ordering number:ENN572E PNP, NPN Epitaxial Planar Silicon Transistors 2SA1016, 1016K, 2SC2362, 2362K High-Voltage Low-Noise Amp Applications Package Dimensions unit:mm 2003B [2SA1016, 1016K, 2SC2362, 2362K] 5.0 4.0 4.0 0.45 0.5 0.45 0.44 0.6 2.0 14.0 5.0 ( ) : 2SA1016, 1016K Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta = 25˚C Conditions Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product ICBO IEBO hFE fT VCB=( )80V, IE=0 VEB=( )4V, IC=0 VCE=( )6V, IC=( )1mA VCE=( )6V, IC=( )1mA Output Capacitance Cob VCB=( )10V, f=1MHz * : The 2SA1016, K, 2SC2362, K are classified by 1mA hFE as follows : Rank F G H hFE 160 to 320 280 to 560 480.