2SC2362 PDF Datenblatt
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Beschreibung
This is High-Voltage Low-Noise Amp Applications. Ordering number:ENN572E
PNP, NPN Epitaxial Planar Silicon Transistors
2SA1016, 1016K, 2SC2362, 2362K
High-Voltage Low-Noise Amp Applications
Package Dimensions
unit:mm 2003B
[2SA1016, 1016K, 2SC2362, 2362K]
5.0 4.0 4.0
0.45 0.5 0.45 0.44
0.6 2.0 14.0 5.0
( ) : 2SA1016, 1016K
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature
VCBO VCEO VEBO
IC ICP PC Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current Emitter Cutoff Current DC Current Gain
Gain-Bandwidth Product
ICBO IEBO hFE
fT
VCB=( )80V, IE=0 VEB=( )4V, IC=0 VCE=( )6V, IC=( )1mA
VCE=( )6V, IC=( )1mA
Output Capacitance
Cob VCB=( )10V, f=1MHz
* : The 2SA1016, K, 2SC2362, K are classified by 1mA hFE as follows :
Rank
F
G
H
hFE 160 to 320 280 to 560 480.