2SC2320 PDF Datasheet


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Description

This is NPN Epitaxial Planar Silicon Transistor. 2SC2320 Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications NPN Epitaxial Planar Silicon Transistor Excellent hFE Linearity Complementary to 2SA999 6.2 MAX. 5.6 MAX. Unit : mm 4.6 4.4 MAX. 1.5 1 2 3 0.45 10.5 MIN. MAXIMUM RATINGS (Ta = 25 °C) CHARACTERISTIC Collector-Base Voltage Emitter-Base Voltage Collector-Emitter Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL RATING UNIT VCBO VEBO VCEO Ic Pc Tj Tstg 50 6 50 200 300 125 -55~+125 V V V mA mW 1 : Emitter 2 : Collector 3 : Base 1.25 1 2 3 1.25 °C °C EIAJ : SC-43 JEDEC : TO-92 ELECTRICAL CHARACTERISTICS (Ta = 25 °C) CHARACTERISTIC Collector-Emitter Breakdown Voltage SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT. V(BR)CEO Ic = 100μA, RBE = ∞ ICBO IEBO hFE hFE 50 0.1 0.1 90 50 0.3 200 3,5 2 800 Collector Cut-off current Emitter Cut-off current DC Current Gain DC Current Gain Collector-Emitter Saturation Voltage VCB = 50V, IE = 0 VEB .