2SC1623 PDF Datasheet
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Description
This is AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD. DATA SHEET
SILICON TRANSISTOR
2SC1623
AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD
FEATURES High DC Current Gain: hFE = 200 TYP. (VCE = 6.0 V, IC = 1.0 mA) High Voltage: VCEO = 50 V ABSOLUTE MAXIMUM RATINGS
PACKAGE DIMENSIONS
in millimeters
2.8 ± 0.2 0.4 +0.1 0.05 1.5 0.65 +0.1 0.15
0.95
Maximum Voltages and Current (TA = 25 ˚C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Maximum Power Dissipation Total Power Dissipation at 25 ˚C Ambient Temperature PT Maximum Temperatures Junction Temperature Storage Temperature Range Tj Tstg 150 ˚C 55 to +150 ˚C 200 mW
1.1 to 1.4
VCBO VCEO VEBO IC
60 50 5.0 100
V V V mA
2.9 ± 0.2
2 3
0.95
Marking 0.3 0.16 +0.1 0.06 TEST CONDITIONS VCB = 60 V, IE = 0 VEB = 5.0 V, IC = 0 VCE = 6.0 V, IC = 1.0 mA* V V V MH- pF IC = 100 mA, IB = 10 mA* IC = 100 mA, IB = 10 mA* VCE = 6.0 V, IC = 1.0 mA* VCE = 6.0 V, IE = 10 mA VCB = 6.0 V, IE = 0, f = 1..