2SB1412 PDF Datasheet
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Description
This is Low Frequency Transistor. Low frequency transistor ( 20V, 5A)
2SB1412
zFeatures 1) Low VCE(sat).
VCE(sat) = 0.35V (Typ.) (IC, IB = 4A , 0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2118.
zStructure Epitaxial planar type PNP silicon transistor
zDimensions (Unit : mm)
2SB1412
ROHM : CPT3 EIAJ : SC-63
Denotes hFE
(1) Base (2) Collector (3) Emitter
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Collector-base voltage
VCBO
30
Collector-emitter voltage
VCEO
20
Emitter-base voltage
VEBO
6
Collector current
5 IC
10
Collector power
dissipation
2SB1412
PC
1 10
Junction temperature
Tj
150
Storage temperature
Tstg
55 to 150
1 Single pulse, Pw=10ms
Unit V V V
A(DC)
A(Pulse) 1
W W(Tc=25°C)
°C °C
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Collector-base breakdown voltage BVCBO
Collector-emitter breakdown voltage BVCEO
Emitter-base breakdown voltage
BVEBO
Collector cutoff current
ICBO
Emitter cutoff current
IEBO
Coll.