2SB1183 PDF Datasheet
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Description
This is Power transistor. 2SB1183 , 2SB1239
Transistors
Power transistor ( 40V, 2A)
2SB1183 , 2SB1239
!Features 1) Darlington connection for high DC current gain. 2) Built-in 4kΩ resistor between base and emitter. 3) Complements the 2SD1759 , 2SD1861. !External dimensions (Units : mm)
2SB1183
0.75
5.5 1.5
(3) (2) (1)
2.3
0.9
0.9
0.65
2.3
!Equivalent circuit
1.0 0.5
C
0.5 1.0 0.9 14.5 4.4
1.5 2.5 9.5
B RBE 4kΩ
ROHM : CPT3 EIAJ : SC-63
E
(1) Base(Gate) (2) Collector(Drain) (3) Emitter(Source)
C : Collector B : Base E : Emitter
2SB1239
6.8 2.5
!Absolute maximum ratings (Ta=25°C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature 2SB1183 2SB1239 Tj Tstg Symbol VCBO VCER VEBO IC Limits 40 40 5 2 3 1 10 1 150 55~+150 Unit V V V A(DC) A(Pulse) W W(Tc=25°C) W °C °C
0.65Max.
0.5 (1) (2) (3)
1
2.54 2.54
1.05
2.3
0.45
0.8Min.
PC
2
Taping specifications
ROHM : ATV
1 Sin.