2SA836 PDF Datasheet


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Description

This is Silicon PNP Epitaxial. 2SA836 Silicon PNP Epitaxial Application Low frequency low noise amplifier Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SA836 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IE PC Tj Tstg Ratings 55 55 5 100 100 200 150 55 to +150 Unit V V V mA mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 55 55 5 1 Typ 0.1 0.66 200 2.0 1 0.5 Max 100 50 500 0.5 0.75 5 1 Unit V V V nA nA Test conditions I C = 10 A, IE = 0 I C = 1 mA, RBE = ∞ I E = 10 A, IC = 0 VCB = 18 V, IE = 0 VEB = 2 V, IC = 0 VCE = 12 V, IC = 2 mA Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio .