2SA2069 PDF Datasheet
Please enter the part number you wish to PDF download in the search bar.
Description
This is Silicon PNP Epitaxial Type Transistor. TOSHIBA Transistor Silicon PNP Epitaxial Type
2SA2069
High-Speed Switching Applications DC-DC Converter Applications
2SA2069
Unit: mm
High DC current gain: hFE = 200 to 500 (IC = 0.15 A) Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max) High-speed switching: tf = 37 ns (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC Pulse
Base current
Collector power dissipation
t = 10 s DC
Junction temperature
Storage temperature range
VCBO VCEO VEBO
IC ICP IB PC (Note 1)
Tj Tstg
20 20 7 1.5 2.5 150 2.0 1.0 150 55 to 150
V V V
A
mA
W
°C °C
Note 1: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2)
JEDEC
―
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)
Note 2: Using continuously under heavy loads (e.g. the application of high temperature, current, voltage and the significant change in temperature, etc..