2SA1982 PDF Datasheet
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Description
This is Silicon PNP Epitaxial Transistor. Transistor
2SA1982
Silicon PNP epitaxial planer type
For low-frequency high breakdown voltage amplification Complementary to 2SC5346
6.9±0.1
0.15
Unit: mm
1.05 2.5±0.1 ±0.05 (1.45) 0.8
0.5 4.5±0.1 0.45 0.05
0.7
4.0
s Features
q q q q
Satisfactory foward current transfer ratio hFE collector current IC characteristics. High collector to emitter voltage VCEO. Small collector output capacitance Cob. Makes up a complementary pair with 2SC2631, which is optimum for the pre-driver stage of a 20 to 40W output amplifier. (Ta=25˚C)
Ratings 150 150 5 100 50
*
0.65 max.
1.0 1.0
0.2
0.45 0.05
+0.1
+0.1
2.5±0.5
2.5±0.5 2 3
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
*
1
Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
Unit V V V mA mA W ˚C ˚C
0.1 0.45+ 0.05
Note: In addition to the lead type shown in the .