2SA1972 PDF Datasheet
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Description
This is TRANSISTOR (HIGH VOLTAGE SWITCHING APPLICATIONS).
2SA1972
TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SA1972
High-Voltage Switching Applications
Unit: mm
High breakdown voltage: VCEO = 400 V
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 400 400 7 0.5 1 0.25 900 150 55 to 150 Unit V V V A A mW °C °C
JEDEC
TO-92MOD
JEITA ― Note1: Using continuously under heavy loads (e.g. the application of high temperature, current, voltage and the significant change in TOSHIBA 2-5J1A temperature, etc.) may cause this product to decrease in the Weight: 0.36 g (typ.) reliability significantly even if the operating conditions (i.e. operating temperature, current, voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing t.