2SA1967 PDF Datasheet
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Description
This is NPN Triple Diffused Planar Silicon Transistor. Ordering number:5182
NPN Triple Diffused Planar Silicon Transistor
2SA1967
High-Voltage Amplifier, High-Voltage Switching Applications
Features
· High breakdown voltage (VCEO min= 900V). · Small Cob (Cob typ=2.2pF). · High reliability (Adoption of HVP process).
Package Dimensions
unit:mm 2010C
[2SA1967]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP PC Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage
Symbol
Conditions
ICBO IEBO hFE
fT Cob VCE.