2SA1962 PDF Datasheet
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Description
This is SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR. TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SA1962
Power Amplifier Applications
2SA1962
Unit: mm
High breakdown voltage: VCEO = 230 V (min) Complementary to 2SC5242
Recommended for 80-W high-fidelity audio frequency amplifier output stage.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V CBO
230
V
Collector-emitter voltage
V CEO
230
V
Emitter-base voltage
VEBO 5 V
Collector current
IC 15 A
Base current
IB 1.5 A
Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range
PC 130 W
Tj 150 °C
T stg
55 to 150
°C
JEDEC JEITA TOSHIBA
― ― 2-16C1A
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 4.7 g (typ.)
temperature, current, voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature, current, voltage, etc.