2SA1837 PDF Datasheet
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Description
This is Silicon PNP Epitaxial Type Transistor. TOSHIBA Transistor Silicon PNP Epitaxial Type
2SA1837
Power Amplifier Applications Driver Stage Amplifier Applications
2SA1837
Unit: mm
High transition frequency: fT = 70 MH- (typ.) Complementary to 2SC4793
Maximum Ratings (Tc = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Ta = 25°C Tc = 25°C
Junction temperature
Storage temperature range
Symbol
VCBO VCEO VEBO
IC IB
PC
Tj Tstg
Rating
230 230
5 1 0.1 2.0 20 150 55 to 150
Electrical Characteristics (Tc = 25°C)
Unit V V V A A
W
°C °C
JEDEC
―
JEITA
―
TOSHIBA
2-10R1A
Weight: 1.7 g (typ.)
Characteristics
Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance
Symbol
Test Condition
ICBO IEBO V (BR) CEO hFE VCE (sat) VBE
fT Cob
VCB = 230 V, IE = 0 V.