2SA1225 PDF Datasheet
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Description
This is Silicon PNP Epitaxial Type Transistor. TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1225
Power Amplifier Applications Driver Stage Amplifier Applications
2SA1225
Unit: mm
High transition frequency: fT = 100 MH- (typ.) Complementary to 2SC2983
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
160
V
Collector-emitter voltage
VCEO
160
V
Emitter-base voltage
VEBO 5 V
Collector current
Base current
Collector power dissipation
Ta = 25°C Tc = 25°C
IC IB
PC
1.5 0.3 1.0 15
A A
W
Junction temperature Storage temperature range
Tj 150 °C
Tstg
55 to 150
°C
JEDEC
―
Note: Using continuously under heavy loads (e.g. the application of high
JEITA
―
temperature, current, voltage and the significant change in temperature, etc.) may cause this product to decrease in the
TOSHIBA
2-7J1A
reliability significantly even if the operating conditions (i.e. operating temperature, current, voltage, etc.) are within the absolute
Weight: 0.36 .