2SA1209 PDF Datasheet
Please enter the part number you wish to PDF download in the search bar.
Description
This is 160V/140mA High-Voltage Switching AF 100W Predriver Applications. Ordering number:ENN779D
PNP, NPN Epitaxial Planar Silicon Transistors
2SA1209, 2SC2911
160V, 140mA High-Voltage Switching and AF 100W Predriver Applications
Features
· Adoption of FBET process. · High breakdown voltage. · Good linearity of hFE and small Cob. · Fast switching speed.
Package Dimensions
unit:mm
2009B
[2SA1209, 2SC2911]
8.0 4.0
2.7
1.5 3.0 7.0
11.0
1.6 0.8
0.8
0.6
3.0
0.5
15.5
( ) : 2SA1209
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse)
Symbol
VCBO VCEO VEBO
IC ICP
Collector Dissipation
PC
Junction Temperature Storage Temperature
Tj Tstg
Electrical Characteristics at Ta = 25˚C
Tc=25˚C
12 3 2.4
4.8
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current
ICBO VCB=( )80V, IE=0
Emitter Cutoff Current
IEBO VEB=( )4V, IC=0
DC Current Gain
hFE VCE=( )5V, IC=( )10mA
Gain-Bandwidth Product
fT VCE=( )10V.