2SA1117 PDF Datasheet
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Description
This is Silicon PNP Power Transistors. Huandong Electronics
Product Specification
Silicon PNP Power Transistors
2SA1117
DESCRIPTION ¡¤ With TO-3 package ¡¤ High power dissipations APPLICATIONS ¡¤ For power switching amplifier and general purpose applications
PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION
Absolute maximum ratings(Ta=¡æ )
SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25¡æ CONDITIONS Open emitter Open base Open collector VALUE -200 -200 -6 -17 -5 200 150 -65~150 ¡æ ¡æ UNIT V V V A A W
Huandong Electronics
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25¡æ unless otherwise specified PARAMETER CONDITIONS MIN
2SA1117
SYMBOL
TYP.
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=-50mA ;IB=0
-200
V
.