2SA1015 PDF Datasheet
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Description
This is Silicon NPN Epitaxial Type TRANSISTOR. 2SA1015(L)
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1015(L)
Audio Frequency Amplifier Applications Low Noise Amplifier Applications
High voltage and high current: VCEO = 50 V (min), IC = 150 mA (max)
Excellent hFE linearity: hFE (2) = 80 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA), hFE (IC = 2 mA) = 0.95 (typ.)
Low noise: NF = 0.2dB (typ.) (f = 1 kHz) Complementary to 2SC1815 (L)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 50 V
Collector-emitter voltage
VCEO 50 V
Emitter-base voltage
VEBO 5 V
Collector current
IC
150
mA
Base current
IB 50 mA
Collector power dissipation
PC 400 mW
Junction temperature Storage temperature range
Tj 125 °C
Tstg
55~125
°C
JEDEC JEITA
TO-92 SC-43
Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
temperature, current, voltage and the significant change in temperature,
2-5F1B
etc.) m.