2PG002 PDF Datasheet


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Description

This is N-Channel Enhancement Mode IGBT. This product complies with the RoHS Directive (EU 2002, 95, EC). IGBT 2PG002 N-channel enhancement mode IGBT For plasma display panel drive For high speed switching circuits Features Low collector-emitter saturation voltage: VCE(sat) < 2.4 V High speed hall time: tf = 190 nsec(typ.) Package Code TO-220F-A1 Marking Symbol: 2PG002 Pin Name 1. Gate 2. Collector 3. Emitter Parameter Symbol VCES IC VGES ICP PC Tj Collector-emitter voltage (E-B short) Gate-emitter voltage (E-B short) Collector current Peak collector current * Power dissipation Ta = 25°C Junction temperature Storage temperature Tstg Note) *: PW ≤ 10 us, Duty ≤ 1.0% Electrical Characteristics TC = 25°C±3°C Parameter Collector-emitter voltage (E-B short) Symbol VCES ICES IGES Gate-emitter cutoff current (E-B short) Gate-emitter threshold voltage Collector-emitter saturation voltage on tin ue Collector-emitter cutoff current (E-B short) , D isc VGE(th) Cies VCE(sat) Coes Cres Qg Qge Qgc tr t.