2N7002LT1 PDF Datasheet
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Description
This is CASE 318-08/ STYLE 21 SOT-23 (TO-236AB). MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 2N7002LT1, D
TMOS FET Transistor
N Channel Enhancement
3 DRAIN 1 GATE
2N7002LT1
Motorola Preferred Device
3
2 SOURCE
MAXIMUM RATINGS
Rating Drain Source Voltage Drain Gate Voltage (RGS = 1.0 MΩ) Drain Current Continuous TC = 25°C(1) Drain Current Continuous TC = 100°C(1) Drain Current Pulsed(2) Gate Source Voltage Continuous Non repetitive (tp ≤ 50 s) Symbol VDSS VDGR ID ID IDM VGS VGSM Value 60 60 ± 115 ± 75 ± 800 ± 20 ± 40 Unit Vdc Vdc mAdc
1 2
CASE 318 08, STYLE 21 SOT 23 (TO 236AB)
Vdc Vpk
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR 5 Board,(3) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(4) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD RθJA PD Max 225 1.8 556 300 2.4 RθJA TJ, Tstg 417 55 to +150 Unit mW mW, °C °C, W mW mW, °C °C, W °C
DEVI.