2N7002DW PDF Datasheet
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Description
This is DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR. NEW PRODUCT
2N7002DWA
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS 60V
RDS(ON)
8Ω @ VGS = 5V 6Ω @ VGS = 10V
Package SOT363
ID TA = +25°C
170mA
200mA
Description
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
Features
Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Small Surface Mount Package HBM Class 1C Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability
Applications
DC-DC Converters Power Management Functions Battery Operated Systems and Solid-State Relays Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc.
Mechanical Data
Case: SOT363 Case Material: Molded Plastic.
UL Flammabil.