2N7002 PDF Datasheet
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Description
This is N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR. 2N7002
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
VOLTAGE 60 Volts CURRENT 115 mAmp PACKAGE SOT-23
DESCRIPTION
N-channel enhancement mode field effect transistor, designed for high speed pulsed amplifier and driver applications, which is manufactored by the N-Channel DMOS process.
FEATURES
High density cell design for low RDS(ON). Voltage controlled small signal switching. Rugged and reliable. High saturation current capability. High-speed switcing. CMOS logic compatible input. Not thermal runaway. No secondary breakdown.
D
G
S
ABSOLUTE MAXIMUM RATINGS
TA = 25OC Unless otherwise noted.
Parameter Drain-Source Voltage Drain-Gate Voltage (Rgs
Symbol V
DSS
2N7002 60 60
± 20 ± 20
Units V V V mA mW mW , OC
O
≤ 1MΩ)
VDRG V
GSS
Gate Source Voltage -Continuous -No Repetitive (tp<50 s) Maximum Drain Current -Continuous -Pulsed Maximum POwer Dissipation Derated Above 25OC Operation and Storage Temperature Range Thermal Resistance, Junction-to-Ambient
ID P
D.