2N7000 PDF Datasheet
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Description
This is 60V, 200mA, N-channel MOSFET. MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 2N7000, D
TMOS FET Transistor
N Channel Enhancement
3 DRAIN 2 GATE 1 SOURCE
2N7000
Motorola Preferred Device
MAXIMUM RATINGS
Rating Drain Source Voltage Drain Gate Voltage (RGS = 1.0 MΩ) Gate Source Voltage Continuous Non repetitive (tp ≤ 50 s) Drain Current Continuous Pulsed Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Temperature Range Symbol VDSS VDGR VGS VGSM ID IDM PD TJ, Tstg Value 60 60 ± 20 ± 40 200 500 350 2.8 55 to +150 mW mW, °C °C Unit Vdc Vdc Vdc Vpk mAdc CASE 29 04, STYLE 22 TO 92 (TO 226AA)
1 2 3
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1, 16″ from case for 10 seconds Symbol RθJA TL Max 357 300 Unit °C, W °C
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Drain Source Breakdown Voltage (VGS = 0, ID = 10 Adc) Z.