2N6296 PDF Datasheet
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Description
This is COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS. 2N6294 2N6295 NPN 2N6296 2N6297 PNP
COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6294, 2N6296 series devices are complementary silicon Darlington power transistors, manufactured by the epitaxial base process, designed for high gain amplifier and medium speed switching applications.
MARKING: FULL PART NUMBER
TO-66 CASE
MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance
SYMBOL VCBO VCEO VEBO IC ICM IB PD TJ, Tstg
JC
2N6294 2N6296
60
2N6295 2N6297
80
60 80
5.0
4.0
8.0
80
50
-65 to +200
3.5
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICEV
VCE=Rated VCEO, VEB=1.5V
ICEV
VCE=Rated VCEO, VEB=1.5V, TC=150°C
ICEO
VCE=½Rated VCEO
IEBO
VEB=5.0V
BV.