2N3905 PDF Datasheet
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Description
This is 40V, 0.2A, General Purpose Transistors(PNP Silicon). MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 2N3905, D
General Purpose Transistors
PNP Silicon
COLLECTOR 3 2 BASE 1 EMITTER
2N3905 2N3906*
*Motorola Preferred Device
1
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Power Dissipation @ TA = 60°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD PD TJ, Tstg Value 40 40 5.0 200 625 5.0 250 1.5 12 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW, °C mW Watts mW, °C °C
2
3
CASE 29 04, STYLE 1 TO 92 (TO 226AA)
THERMAL CHARACTERISTICS(1)
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit °C, W °C, W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector.