20N60S5 PDF Datasheet
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Description
This is SPP20N60S5. Cool MOS™ Power Transistor
Feature New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge Periodic avalanche rated Extreme dv, dt rated Ultra low effective capacitances Improved transconductance
SPP20N60S5
VDS RDS(on)
ID
600 0.19 20
V Ω A
PG-TO220
2
P-TO220-3-1
123
Type SPP20N60S5
Package PG-TO220
Ordering Code Q67040-S4751
Marking 20N60S5
Maximum Ratings
Parameter
Symbol
Continuous drain current
TC = 25 °C TC = 100 °C
ID
Pulsed drain current, tp limited by Tjmax
ID puls
Avalanche energy, single pulse
EAS
ID = 10 A, VDD = 50 V
Avalanche energy, repetitive tAR limited by Tjmax1) EAR ID = 20 A, VDD = 50 V
Avalanche current, repetitive tAR limited by Tjmax IAR
Gate source voltage
VGS
Gate source voltage AC (f >1Hz)
VGS
Power dissipation, TC = 25°C
Operating and storage temperature
Ptot Tj , Tstg
Value
20 13 40 690
1
20 ±20 ±30 208 -55... +150
Unit A
mJ
A V W °C
Rev. 2.8
Page 1
2009-12-01
SPP20N60S5
.