1SS198 PDF Datasheet
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Description
This is Silicon Schottky Barrier Diode for Various Detector/ High Speed Switching. 1SS198
Silicon Schottky Barrier Diode for Various Detector, High Speed Switching
ADE-208-298A (Z) Rev. 1 Oct. 1998 Features
Detection efficiency is very good. Small temperature coefficient. Small glass package (MHD) enables easy mounting and high reliability.
Ordering Information
Type No. 1SS198 Cathode Green Mark 2 Package Code MHD
Outline
2
1 Cathode band
2
1. Cathode 2. Anode
1SS198
Absolute Maximum Ratings (Ta = 25°C)
Item Reverse voltage Average rectified current Junction temperature Storage temperature Symbol VR IO Tj Tstg Value 10 30 125 55 to +125 Unit V mA °C °C
Electrical Characteristics (Ta = 25°C)
Item Forward current Reverse current Capacitance Rectifier efficiency ESD-Capability Notes: 1.
*1
Symbol IF IR C η
Min 4.5 70 100
Typ
Max 70 1.5
Unit mA A pF % V
Test Condition VF = 1V VR = 6V VR = 1V, f = 1MH- Vin = 2Vrms, f = 40MHz, RL = 5kΩ, CL = 20pF C = 200pF, Both forward and reverse direction 1 pulse.
Failure Criterion ; IR ≥ 14.