1SS184 PDF Datasheet
Please enter the part number you wish to PDF download in the search bar.
Description
This is SILICON EPITAXIAL PLANAR DIODE. TOSHIBA Diode Silicon Epitaxial Planar Type
1SS184
1SS184
Ultra High-Speed Switching Applications
Unit: mm
- Small package: SC-59 - Low forward voltage: VF (3) = 0.9 V (typ.) - Fast reverse recovery time: trr = 1.6 ns (typ.) - Small total capacitance: CT = 0.9 pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forward current Average forward current Surge current (10 ms) Power dissipation
VRM VR IFM IO IFSM P
85 80 300* 100* 2* 150
V V mA mA A mW
Junction temperature Storage temperature
Tj 125 °C
Tstg
55 to 125
°C
Note: Using continuously under heavy loads (e.g. the application of high
JEDEC
TO-236MOD
temperature, current, voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature, current, voltage, etc.) are within the absolute maximum
JEITA
SC.