16N50C PDF Datasheet
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Description
This is SIHF16N50C.
SiHP16N50C, SiHB16N50C, SiHF16N50C
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
TO-220AB TO-220 FULLPAK
FEATURES
560 V VGS = 10 V 68 17.6 21.8 Single
D
Low Figure-of-Merit Ron x Qg
0.38
100 % Avalanche Tested Gate Charge Improved Trr, Qrr Improved Compliant to RoHS Directive 2002, 95, EC
G
D
S GD S
D2PAK
(TO-263)
G
S
G D S
N-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free TO-220AB SiHP16N50C-E3 D2PAK (TO-263) SiHB16N50C-E3 TO-220 FULLPAK SiHF16N50C-E3
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
LIMIT PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Currentc VGS at 10 V TC = 25 °C TC = 100 °C TO220-AB SYMBOL D2PAK (TO-263) VDS VGS ID IDM Energyb EAS PD TJ, Tstg for 10 s 250 - 55 to + 150 300 °C 500 ± 30 16 10 40 2 320 38 W, °C mJ W A TO-220 FULLPAK UNIT V
Linear Derating Factor Single Pu.