11N60S5 PDF Datasheet
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Description
This is SPP11N60S5. SPP11N60S5, SPB11N60S5 SPI11N60S5 Cool MOS™ Power Transistor
VDS RDS(on) ID
P-TO262 P-TO263-3-2
600 0.38 11
V Ω A
Feature
New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv, dt rated Ultra low effective capacitances Improved transconductance
P-TO220-3-1
2
1 P-TO220-3-1
23
Type
Package
Ordering Code
SPP11N60S5 SPB11N60S5 SPI11N60S5
Maximum Ratings Parameter
P-TO220-3-1 P-TO263-3-2 P-TO262
Q67040-S4198 Q67040-S4199 Q67040-S4338
Marking 11N60S5 11N60S5 11N60S5
Symbol
ID
Value 11 7
Unit A
Continuous drain current
TC = 25 °C TC = 100 °C
Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse
I D = 5.5 A, VDD = 50 V
I D puls EAS
22 340 0.6 11 ±20
±30
mJ
Avalanche energy, repetitive tAR limited by Tjmax1) EAR
I D = 11 A, VDD = 50 V
Avalanche current, repetitive tAR limited by Tjmax I AR Gate source voltage VGS Gate source voltage AC (f >1Hz)
Power dissipation, T C = 25°C
.