09N03LA PDF Datasheet


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Description

This is IPB09N03LA. IPB09N03LA IPI09N03LA, IPP09N03LA OptiMOS®2 Power-Transistor Features Ideal for high-frequency dc, dc converters N-channel Logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Superior thermal resistance 175 °C operating temperature dv , dt rated P-TO263-3-2 Product Summary V DS R DS(on),max (SMD version) ID 25 8.9 50 V mΩ A P-TO262-3-1 P-TO220-3-1 Type IPB09N03LA IPI09N03LA IPP09N03LA Package P-TO263-3-2 P-TO262-3-1 P-TO220-3-1 Ordering Code Q67042-S4151 Q67042-S4152 Q67042-S4153 Marking 09N03LA 09N03LA 09N03LA Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C1) T C=100 °C Pulsed drain current Avalanche energy, single pulse Reverse diode dv , dt Gate source voltage3) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS dv , dt V GS P tot T j, T stg T C=25 °C T C=25 °C2) I D=45 A, R GS.