08N50E PDF Datasheet
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Description
This is FMP08N50E. FMP08N50E
Super FAP-E3 series
Features
Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv, dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
TO-220AB
Equivalent circuit schematic
Drain(D)
Applications
Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters
Gate(G) Source(S)
Maximum Ratings and Characteristics
Absolute Maximum Ratings at Tc=25°C (unless otherwise speci ed)
Description Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Peak Diode Recovery dV, dt Peak Diode Recovery -di, dt Maximum Power Dissipation Operating and Storage Temperature range Symbol VDS VDSX ID I DP VGS.