07N60S5 PDF Datasheet


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Description

This is SPI07N60S5. Cool MOS™ Power Transistor Feature New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge Periodic avalanche rated Extreme dv, dt rated Ultra low effective capacitances Improved transconductance SPP07N60S5 SPI07N60S5 VDS RDS(on) ID 600 V 0.6 Ω 7.3 A PG-TO262 PG-TO220 2 P-TO220-3-1 123 Type SPP07N60S5 SPI07N60S5 Package PG-TO220 PG-TO262 Ordering Code Q67040-S4172 Q67040-S4328 Marking 07N60S5 07N60S5 Maximum Ratings Parameter Symbol Continuous drain current TC = 25 °C TC = 100 °C ID Pulsed drain current, tp limited by Tjmax ID puls Avalanche energy, single pulse EAS ID = - A, VDD = 50 V Avalanche energy, repetitive tAR limited by Tjmax1) EAR ID = 7.3 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax IAR Gate source voltage Gate source voltage AC (f >1Hz) VGS VGS Power dissipation, TC = 25°C Operating and storage temperature Ptot Tj , Tstg Value 7.3 4.6 14.6 230 0.5 7.3 .