07N60S5 PDF Datasheet
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Description
This is SPI07N60S5. Cool MOS™ Power Transistor
Feature New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge Periodic avalanche rated Extreme dv, dt rated Ultra low effective capacitances Improved transconductance
SPP07N60S5 SPI07N60S5
VDS RDS(on)
ID
600 V 0.6 Ω 7.3 A
PG-TO262 PG-TO220
2
P-TO220-3-1
123
Type SPP07N60S5 SPI07N60S5
Package PG-TO220 PG-TO262
Ordering Code Q67040-S4172 Q67040-S4328
Marking 07N60S5
07N60S5
Maximum Ratings
Parameter
Symbol
Continuous drain current
TC = 25 °C TC = 100 °C
ID
Pulsed drain current, tp limited by Tjmax
ID puls
Avalanche energy, single pulse
EAS
ID = - A, VDD = 50 V
Avalanche energy, repetitive tAR limited by Tjmax1) EAR
ID = 7.3 A, VDD = 50 V
Avalanche current, repetitive tAR limited by Tjmax IAR
Gate source voltage Gate source voltage AC (f >1Hz)
VGS VGS
Power dissipation, TC = 25°C
Operating and storage temperature
Ptot Tj , Tstg
Value
7.3 4.6 14.6 230
0.5
7.3 .