Part Number : RJP63F3DPP-M0
Function :Silicon N Channel IGBT / High Speed Power Switching
Manufacturer : Renesas Electronics
Pinout : 
Description
• Trench gate and thin wafer technology (G6H series)
• Low collector to emitter saturation voltage VCE(sat)= 1.7 V typ
• High speed switching tf = 100 ns typ
• Low leak current ICES= 1 μA max
• Isolated package TO-220FL
Datasheet PDF Download
Other datasheets in the file : RJP63F, RJP63F3, RJP63F3DPP-M0