Part Number : RJP30K3DPP-M0
Function : Silicon N Channel IGBT High Speed Power Switching
Manufacturer : Renesas Electronics
Pinout :
Description
Trench gate and thin wafer technology (G6H-II series),
Low collector to emitter saturation voltage VCE(sat)= 1.1V typ, High speed switching tr = 90 ns typ, tf = 250 ns typ, Low leak current ICES= 1 A max, Isolated package TO-220FL
Datasheet PDF Download
Other datasheets in the file :
RJP30,RJP30K3DPP-M0