RJP30H2DPK-M0 Datenblatt PDF ( Pinout, schematic )

Teilenummer : RJP30H2DPK-M0

Function : Silicon N Channel IGBT High speed power switching

Hersteller : Renesas Electronics

Pinout :

RJP30H2DPK-M0 datenblatt

Beschreibung :

* Trench gate and thin wafer technology (G6H-II series)

*  Low collector to emitter saturation voltage: VCE(sat)= 1.4 V typ

*  High speed switching: tf = 100 ns typ, tf = 180 ns typ

*  Low leak current: ICES= 1 A max

Datenblatt PDF Download

RJP30H2DPK-M0 pdf

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