RJH30E2
RJH30E2 features:
(1) Trench gate and thin wafer technology (G6H-II series)
(2) High speed switching: tr =80 ns typ., tf = 150 ns typ.
(3) Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ.
(4) Low leak current: ICES = 1 mA max.
(5) Built-in Fast Recovery Diode: VF = 1.4 V typ., trr = 23 ns typ.
(6)Isolated package: TO-220FL.