Part Number : RJH30
Function : Silicon N Channel IGBT High speed power switching
Manufacturer : Renesas Electronics
Pinout :
Description
Trench gate and thin wafer technology (G6H-II series),
High speed switching: tr =80 ns typ., tf = 150 ns typ.,
Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ.
Datasheet PDF Download
Other datasheets in the file :
RJH30