Part Number : K10A60D
Function :TOSHIBA Field Effect Transistor Silicon N Channel MOS Type / Switching Regulator Applications
Manufacturer : Toshiba
Pinout : 
Description
• Low drain-source ON-resistance: RDS (ON)= 0.58 Ω(typ.)
• High forward transfer admittance: |Yfs| = 6.0 S (typ.)
• Low leakage current: IDSS= 10 μA(max)(VDS= 600 V)
• Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)
Datasheet PDF Download
Other datasheets in the file : K10A60 ,K10A60D, TK10A60D
