Teilenummer : K3567
Function : Silicon N Channel MOS Type / TOSHIBA Field Effect Transistor
Hersteller : Toshiba
Pinout :
Beschreibung :
• Low drain-source ON resistance: RDS (ON)= 1.7 Ω(typ.)
• High forward transfer admittance: |Yfs| = 2.5 S (typ.)
• Low leakage current: IDSS= 100 μA (max) (VDS= 600 V)
• Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)
Datenblatt PDF Download
Andere Datenblätter in der Datei :
2SK3567,K3567