Part Number : 2SK2610
Function :Silicon N Channel MOS Type
Manufacturer : Toshiba
Pinout : 
Description
* Low drain−source ON resistance : RDS (ON)= 2.3 Ω(typ.)
* High forward transfer admittance : |Yfs|=4.4 S (typ.)
* Low leakage current : IDSS= 100 µA (max) (VDS= 720 V)
* Enhancement−mode : Vth= 2.0~4.0 V (VDS= 10 V, ID= 1mA)
Datasheet PDF Download
Other datasheets in the file : 2SK2610, K2610